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Faculty of Electrical Engineering and Information Technology

Research Equipment


© LS MNE ​/​ TU Dortmund

Analysis Tools

Please provide a copyright notice

Description:      

Ellipsometer


Features:

Layer thickness measurement and parameter extraction

JEOL JSM-IT800 © LS MNE ​/​ TU Dortmund

Description:    

Scanning electron microscope (SEM)


Features :

Deben Beam Blanker, Kleindiek Nanotechnik Stage, Xenos Pattern Generator, Resolution down to 0,7nm

In Cooperation with Terahertz Spectroscopy Group (AG Lange)

© LS MNE ​/​ TU Dortmund

Description:    

Scanning electron microscope (SEM)


Features :

Resolution up to 10nm, InLens and SE-detector

Zeiss-LEO 982 © MNE ​/​ TU Dortmund

Description:

Scanning electron microscope (SEM)

with PointElectronic Elektronik Upgrade and Raith ELPHY Quantum


Features:   

Up to 10 nm resolution including a 4k imaging system, topology display, InLens-, SE- and BSE-detector

Oxford Instrumets EDX-System AZtecEnergy X-Max 150 © MNE ​/​ TU Dortmund

Description:   

Energy-dispersive X-ray spectroscopy (EDX) system


Features:     

Low-KV EDX system, ≤127eV @ MnKα, detection of elements starting from Beryllium at a minimum atomic number of Z=4 and higher

 

© LS MNE ​/​ TU Dortmund

Description:  

Digital optical microscope


Features:     

Up to 5000x magnification

© LS MNE ​/​ TU Dortmund

Decription:   

Confocal laser microscope

Description:   

Compound microscope


Features:     

Optical UIS2/UIS (Universal Infinity System)-system

 

© LS MNE ​/​ TU Dortmund

Description:  

Structure Width Measuring System


Features:     

Laser Autofocus

© LS MNE ​/​ TU Dortmund

Description:

Profilometer 


Features:  

Surface profilometry up to 262 µm

© LS MNE ​/​ TU Dortmund

Measurement Instruments

© LS MNE ​/​ TU Dortmund

Description:

Four-point measurement system


Features:    

Sheet resistance measurement on specimen pieces and wafers

© LS MNE ​/​ TU Dortmund

Description:  

Analytical Wafer Prober


Features:     

Light protected measurement station including vacuum chuck and 8 measuring needle tips

© LS MNE ​/​ TU Dortmund

Description:   

Parameter analyser


Features:     

Precision Semiconductor Parameter Analyzer

 

Description:   

Wafer prober


Features:     

Full automatic wafer prober for statistic measurement of device parameters

ARS-10HW Cryo Probestation © MNE ​/​ TU Dortmund

Description:   

Cryogenic Probe Station


Features:     

Closed Cycle, Helium Compressor, Beryllium DC probe Tips

Everbeing BD-6 © MNE ​/​ TU Dortmund

Description:   

RF Wafer Prober


Features:     

RF Measurements up to 40GHz, Temperature Range up to 200°C, metric screws only

© LS MNE ​/​ TU Dortmund

Etching Technology

Oxford PlasmaPro 100 ICP Gaspod und End-Point Detektor © LS MNE ​/​ TU Dortmund

Description:   

Inductive Coupled Plasma (ICP), Reactive Ion Etching (RIE) 


Features:     

12 different Gaslines, Fluorine- Chlorine and Bromine-Pro­ces­ses, End-Point Detection

Description:   

Inductive Coupled Plasma (ICP), Reactive Ion Etching (RIE) 


Features:     

Fluorine- and Chlorine-Pro­ces­ses

© LS MNE ​/​ TU Dortmund

Description:   

Reactive Ion Etching (RIE)


Features:     

Chlorine chamber: SF6, Cl2, CHF4, SiCl4, N2; Fluorine chamber: SF6, O2, Ar, CHF3, N2

© LS MNE ​/​ TU Dortmund

Description:   

Reactive Ion Etching (RIE)


Features:     

Fluorine processes: SF6, O2, Ar, CHF3, N2

© LS MNE ​/​ TU Dortmund

Description:  

Plasma ashing

Features:     

Etching via oxygen plasma, max. 8-inch wafer

Implantation and Doping Technology

© LS MNE ​/​ TU Dortmund

Description:   

Ion Implanter


Features:     

Doping reaching a max. dose of 10e16 cm-2 and a max. ion energy of 350 keV.

© LS MNE ​/​ TU Dortmund

Lithography

Elektronenstrahllithographiesystem JEOL © LS MNE ​/​ TU Dortmund

Description:    

Scanning electron microscope (SEM)


Features :

Deben Beam Blanker, Kleindiek Nanotechnik Stage, Xenos Pattern Generator, Resolution down to 0,7nm

In Cooperation with Terahertz Spectroscopy Group (AG Lange)

© LS MNE ​/​ TU Dortmund

Description:   

Electron Beam Lithography (EBL)


Features:     

Patterns sizing down to 10 nm on die substrates, laser interferometer controlled stitching

Zeiss-LEO 982 © MNE ​/​ TU Dortmund

Description:   

E-Beam Lithography (EBL),

includes PointElectronic Upgrade and Raith ELPHY Quantum Lithography Extension


Features:     

Patterns sizing down to 10 nm on die substrates

 

Description:   

Direct exposure system


Features:     

Minimum pattern resolution of 300 nm 

© LS MNE ​/​ TU Dortmund

Description:   

UV light exposure system, mask aligner


Features:     

Structure widths down to 0,6 µm on 4 inch substrates

© LS MNE ​/​ TU Dortmund

Description:   

UV light exposure system, mask aligner


Features:     

Structure widths down to 0,6 µm on 4 inch substrates

© LS MNE ​/​ TU Dortmund

Description:   

Spin coating system


Features:     

Wafer sizes up to 200 mm, rotational speeds up to 12000 RPM

 

Description:   

Spin Coating System


Features:     

Wafer sizes up to 200 mm, rotational speeds up to 12000 RPM, used for silicones

© LS MNE ​/​ TU Dortmund

Thin Film Deposition

Description:   

Atomic Layer Deposition


Features:     

Thermal ALD up to 500°C, Glovebox, Picozone™ PZ-100 ozone generator

© LS MNE ​/​ TU Dortmund

Description:   

Plasma Enhanced Chemical Vapor Deposition (PECVD)


Features:     

Thin film deposition by Chemical Vapor Deposition

© LS MNE ​/​ TU Dortmund

Description:   

Reactive Magnetron Sputtering


Features:     

Physical Thin Film Depositon (feat. Al, Ti [ TiN reactive], Ni, Si)

© LS MNE ​/​ TU Dortmund

Description:   

Reactive Magnetron Sputtering


Features:     

Depostion of ITO, Lanthanum hexaboride, Samarium, Yttrium and Bismuth telluride

© LS MNE ​/​ TU Dortmund

Description:   

Evaporation


Features:     

Contains Al-target and Cr-target

© LS MNE ​/​ TU Dortmund

Description:   

Diffusion and oxidation furnace


Features:     

Oxidation (wet and dry), H2 and N2 tempering

Description:   

Low Pressure Chemical Vapour Deposition (LPCVD), Diffusion and oxidation furnace


Features:     

LPCVD, Oxidation (wet and dry), H2 and N2 tempering, temperature range up to 1250°C

Wet etched silicon surface by TMAH © LS MNE ​/​ TU Dortmund

Wet Benches

© LS MNE ​/​ TU Dortmund

Description:     

Wet etching processes for SiO2, Si3N4, Al and Au

© LS MNE ​/​ TU Dortmund

Beschreibung:     

Development of various resists (AZ resists, PMMA etc.)

© LS MNE ​/​ TU Dortmund

Description:     

Wafer cleaning SC1, SC2

© LS MNE ​/​ TU Dortmund

Description:     

Cleaning of horizontal furnaces

© LS MNE ​/​ TU Dortmund

Description:   

Spin Rinser

Cleanroom

Description:   

Fan Filter Units


Features:     

Laminar flow areas at each working station

© LS MNE ​/​ TU Dortmund

Beschreibung:     

Air treatment according to ISO 14644, 21.0°C, 45%rF, 12 Pa overpressure

 

Features:   

DEOS OPEN 500EMS, Carrier 30RA160B, 158kW cooling capacity, Vapac LE90 electrode humidifier

© LS MNE ​/​ TU Dortmund

Description:   

SPS supported custom design


Features:     

Provides O2, N2, Ar, Cl2, SiCl4, H2, N2O, CF4, CHF3, SF6, NH3, SiH4/Ar, SiH2Cl2

© LS MNE ​/​ TU Dortmund

Description:     

Ultrapure Water Supply (UV treated)

© LS MNE ​/​ TU Dortmund

Others

© LS MNE ​/​ TU Dortmund

Description:   

In-House development

Sample-To-Sample Transferprozesse of 2D nanomaterials

© LS MNE ​/​ TU Dortmund

Description:   

Wafer Saw


Features:     

Wafer sizes ranging from 25.4 to 152.4 mm, wafer thicknesses ranging from 10 to 5000 µm, blade rotation 15000 - 45000 RPM

© LS MNE ​/​ TU Dortmund

Description:

Portable Leak Detector

© LS MNE ​/​ TU Dortmund

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Portable Helium Leak Detector

© LS MNE ​/​ TU Dortmund

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Rapid Thermal Annealing up to 1200°C in Ar/H2/N2 atmosphere, substrate sizes up to 6 Inches

Description:     

C4 galvanic solder deposition (bumps)

© LS MNE ​/​ TU Dortmund

Description:  

Ultrasonic Heavy Wire Bonder (400µm)