Current Projects
The fabrication of superconducting tunnel barriers with low manufacturing tolerances for applications in quantum electronics is a technical challenge.
The aim is therefore to advance numerical methods for analyzing time-dependent electromagnetic fields with quantization in view.
In this project we propose a novel concept of a graphene-based BTG platform for TFET characterization.
As part of this project, proof-of-concept transistors will be examined in more detail and optimised in terms of their electrical performance (in particular programmability and programming speed).
By analogy with nanoelectronic applications, a transport model for phonons will be developed that is based on a quantum-Liouville-type equation and allows the inclusion of phonon–phonon scattering mechanisms relevant to the existence of heat transport.
This application is for the procurement of a DC/RF sputter system with confocally arranged cathodes for carrying out innovative application- and basic-oriented research projects.
Innovative research projects will investigate, among other things, the chemical composition and crystallinity of memristive transition metal oxides for neuromorphic applications, as well as the topography and defects of 2D materials for use in novel tunnel field-effect transistors at high spatial resolution.
Within this project an atomic layer deposition (ALD) system will be purchased that is capable to handle substrates with a diameter of up to 200 mm. The ALD system will be used to deposit functional (e.g. multiferroic or memristive) oxides and nitrides, and catalytically active metals.
In this project, MSEs will be fabricated and characterized. Advanced electrical, spectroscopic, and microscopic ex situ and in situ metrology techniques will be used to investigate fundamental physical and electrochemical phenomena.
In this project, these quantum effects will be explored with respect to low-cost on-chip self-calibration references.
The aim is therefore to develop a discontinuous Galerkin method for solving the Liouville–von Neumann equation such that it can also be extended to other important applications, for example spintronics or phonon transport.