Quantum Liouville Equation for Phonon Transport in Integrated Circuits
To enable energy-efficient heat removal in integrated circuits, an accurate understanding of heat transport is important. Thin layers, in particular, play a key role in modern electronic and photonic devices and, due to the quantization effects that occur, are associated with special properties (e.g., higher mobility or lower noise). For analysis, atomistic methods and methods derived from the Boltzmann equation are available, but they are either computationally too demanding or do not account for the quantization effects occurring in thin-film structures. A transport model is to be developed that closes the modeling gap between the atomistic methods prevalent in physics and the conventional circuit-oriented methods prevalent in electronics, so that essential features of heat transport in integrated circuits can be captured efficiently. Ballistic and diffusive processes are to be described adequately, allowing the characterization of time-dependent heat transport parallel (“in-flow”) or perpendicular (“out-flow”) to thin-layer structures. To this end, by analogy with nanoelectronic applications, a transport model for phonons will be developed that is based on a quantum-Liouville-type equation and allows the inclusion of phonon–phonon scattering mechanisms relevant to the existence of heat transport.
DFG Individual Research Grant
- Title: Quantum Liouville Equation for Phonon Transport in Integrated Circuits
- Project number: 528336472
- Project Duration: funded since 2023
- Funding: Individual Research Grant
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