Zum Inhalt


Luftaufnahme vom Campus Nord © Peter Sondermann​/​TU Dortmund

Seit 2020: Lehrstuhl für Mikro- und Nanoelektronik

A. Kosak, S. Tappertzhofen: Simulating the thermal oxidation of silicon (Si) at variable temperatures, 48th international conference on Micro and Nano Engineering - Eurosensors (MNE-ES), 19.-23. September 2022, Leuven, Belgien
S. E. Beck, D. StaudtP. CzybaS. Tappertzhofen: Process optimisation for high electron mobility silicon thin films by spectroscopic ellipsometry analysis, 48th international conference on Micro and Nano Engineering - Eurosensors (MNE-ES), 19.-23. September 2022, Leuven, Belgien
P. CzybaS. E. BeckS. Tappertzhofen: A novel approach for manufacturing controllable transparent haptic surfaces by utilizing in situ grown thin films of electroactive polymers, 48th international conference on Micro and Nano Engineering - Eurosensors (MNE-ES), 19.-23. September 2022, Leuven, Belgien
S. E. Beck, R. AhlmannS. Tappertzhofen: Interaction of Hydrogen with HfO2 for Application as Memristive Gas-Sensitive Devices, 23rd International Conference on Solid State Ionics, 17-22 July 2022, Boston, MA
S. E. Beck, A. Kosak, R. AhlmannS. Tappertzhofen: Memristively Programmable Transistors for Neuromorphic Applications, 23rd International Conference on Solid State Ionics, 17-22 July 2022, Boston, MA
S. Tappertzhofen, R. AhlmannAnodic oxidation effects at the copper/silicon oxide interface, Memories - Materials, Devices, Circuits and Systems, Volume 1, July 2022, 100004, DOI: 10.1016/j.memori.2022.100004
S. TappertzhofenImpact of electrode materials on the performance of amorphous IGZO thin-film transistors, 15 June 2022, MRS Advances (2022), DOI: 10.1557/s43580-022-00298-z
A. Gumprich, J. Liedtke, I. Chirca, S. Tappertzhofen: Buried Graphene-Based Triple Gates for Steep Slope TFETs, Spring Meeting of the Materials Research Society, 8-13 May 2022, Honolulu (Hawaii)
R. AhlmannS. Tappertzhofen: Fabrication of Gas-Sensitive Memristive Devices, Spring Meeting of the Materials Research Society, 8-13 May 2022, Honolulu (Hawaii)
R. AhlmannS. Tappertzhofen: Memristively Programmable Transistors, Spring Meeting of the Materials Research Society, 8-13 May 2022, Honolulu (Hawaii)
D. MertenJ. A. SingerH. FiedlerS. TappertzhofenConcept of an efficient self-startup voltage converter with dynamic maximum power point tracking for microscale thermoelectric generators, 25 April 2022, SN Applied Sciences 4, 154 (2022), DOI: 10.1007/s42452-022-05037-5
G. Milano, M. Aono, L. Boarino,U. Celano, T. Hasegawa, M. Kozicki, S. Majumdar, M. Menghini, E. Miranda, C. Ricciardi, S. Tappertzhofen, K. Terabe, I. Valov: Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications, 11 April 2022, Advanced Materials, 2201248, DOI: 10.1002/adma.202201248
S. Tappertzhofen: Introduction to non-volatile memory, P. Dimitrakis, I. Valov and S. Tappertzhofen: Metal Oxides for Non-Volatile Memory, Februar 2022, Elsevier, Amsterdam, ISBN: 9780128146309
S. Tappertzhofen: Pyroelectric Tomography of AlScN with Sub-Micron Resolution, Fall Meeting of the Materials Research Society, 29 November - 10 Dezember 2021
S. Tappertzhofen, L. Nielen, I. Valov, and R. Waser: Memristively programmable transistors, 5 November 2021, IOP Publishing Ltd, Nanotechnology, Volume 33, Number 4, 045203, DOI: 10.1088/1361-6528/ac317f
F. Sievers, S. Tappertzhofen: Pyroelectric Tomography of Wideband-Gap Materials with Sub-Micron Resolution, Fall Meeting of the European Materials Research Society, 20-23 September 2021
R. Ahlmann, S. Tappertzhofen: Memristive Gas Sensors, Fall Meeting of the European Materials Research Society, 20-23 September 2021
G. Milano, S. Tappertzhofen et al.: EMPIR MEMQuD - Structural, morphological and electrical nanodimensional characterization of memristive devices, Spring Meeting of the European Materials Research Society, 31 Mai - 3 Juni 2021
J. Zimmermann, D. Merten, J. Finke, E. Drabiniok, H. Fiedler, S. Tappertzhofen: Scalable fabrication of cross-plane thin-film thermoelectric generators on organic substrates, 2021, Thin Solid Films, 734, 138850, DOI: 10.1016/j.tsf.2021.138850.
S. Tappertzhofen, S. Bette, F. Sievers, S. Fichtner, S. Bröker and  T. Schmitz-Kempen: Sub-micrometer pyroelectric tomography of AlScN films, Applied Physics Letters 118, 242901 (2021) DOI: 10.1063/5.0047002
D. Merten, J. Zimmermann, S. Tappertzhofen: Simulation of In-Plane Nanostructured Thermoelectric Generatorsfor Design Optimization, 9th NRW Nano Conference: Innovations in Materials and Applications, 21-23 April 2021
S. Tappertzhofen, T. Schmitz-Kempen, S. Tiedke: Metrology and Measurement Techniques in K. S. Szot, F. Krok and K. Roleder: Switching Effects in transition metal oxides, März 2021, PWN SA, Warschau, S. 151-189, ISBN: 978-83-01-21316-9

Alte Publikationen bis 2020:

S. Bette, S.Fichtner, S. Bröker, L. Nielen, T. Schmitz-Kempen, B. Wagner, C. Van Buggenhout, S. Tiedke, S. Tappertzhofen: Infrared-Laser based Characterization of the Pyroelectricity in AlScN Thin-Films, 2019, Thin Solid Films, Volume 692, 137623
G. Di Martino, S. TappertzhofenOptically accessible memristive devices, 2019, Nanophotonics, 8 (10), 1579 – 1589
S. Tappertzhofen, G. Di Martino, S. Hofmann: Nanoparticle Dynamics in Oxide-Based Memristive Devices, 2019, physica status solidi (a), Invited, 217, 1900587
A. Gumprich, F. M. Münchenberger, K. T. Kallis, J. Knoch: Improved nanowire alignment through frequency-varying dielectrophoresis, 44th International Conference on Micro- and Nanoengineering (MNE'18), Copenhagen, Denmark 2018, September 24-27 (peer reviewed)
D. Merten, K. T. Kallis, F. J. Giebel,J. Zimmermann, R.P. Poloczek, H. L. Fiedler and P. Lilienthal: Lithography independent nanostructuring of Bi2Te3 Thermoelectric Devices, Proceedings of the 14th International IEEE India Council International Conference, IIT Roorkee, India 2017, December 15-17, in press (peer reviewed)
S. Tappertzhofen, S. Hofmann: Embedded nanoparticle dynamics and their influence on switching behaviour of resistive memory devices, 2017, Nanoscale, 8 (48), 33072–33082
W. Chen, S. Tappertzhofen, H. J. Barnaby, M. N. Kozicki: SiO2 based conductive bridging random access memory, 2017, Journal of Electroceramics, 1-23
P. Czyba, F. J. Giebel, C. M. Zimmer, K. T. Kallis, and H. L. Fiedler:  Manufacturing a Stacked Nanoscale Fishing Electrode for Gas Sensor Applications Using Freely Suspended Structures, Quantum Matter, Volume 6, Number 1, February 2017, pp. 54-58 (peer reviewed), doi: 10.1166/qm.2017.1398
K. T. Kallis, M. R. Müller, J. Knoch, A. Gumprich and D. MertenElectrostatic Doping of 2D-Materials – From Single Devices Toward Circuitry Exploration, Quantum Matter, Volume 6, Number 1, February 2017, pp. 45-49 (peer reviewed)
R. Wang, P. R. Whelan, P. Braeuninger-Weimer, S. Tappertzhofen, J. A. Alexander-Webber, Z. A. Van Veldhoven, P. R. Kidambi, B. S. Jessen, T. Booth, P. Bøggild, S. Hofmann: Catalyst Interface Engineering for Improved 2D Film Lift-Off and Transfer, 2016, ACS Applied Materials & Interfaces, 8 (48), 33072–33082
S. Cho, C. Yun, S. Tappertzhofen, A. Kursumovic, S. Lee, P. Lu, Q. Jia, M. Fan, J. Jian, H. Wang, S. Hofmann, J. L. MacManus-Driscoll: Self-assembled oxide films with tailored nanoscale ionic and electronic, 2016, Nature Communications, 7, 12373
K. T. Kallis, M. R. Müller, J. Knoch, A. Gumprich, D. MertenElectrostatic Doping of 2D-materials - from single devices toward circuitry exploration, 5th International Conference from Nanoparticles and Nanomaterials to Nanodevices and Nanosystems 2016, Porto Heli, Greece 2016, June 26-30
F. J. Giebel, M. Köhle, P. Czyba, K. J. Kolander, K. T. Kallis, C. M. Zimmer, H. L. FiedlerFabricating freely suspended structures optimized regarding mechanical and electrochemical stability for sensor applications, Microelectronic Engineering 159 (2016), pp. 202–208, doi: 10.1016/j.mee.2016.04.010
G. Di Martino, S. Tappertzhofen, S. Hofmann, J. Baumberg: Nanoscale Plasmon-enhanced spectroscopy in Memristive Switches, 2016, Small, 12, 10, 1334-1341
T. Tsuruoka, I. Valov, S. Tappertzhofen, J. van den Hurk, T. Hasegawa, R. Waser, M. Aono: Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures, 2015, Advanced Functional Materials, Volume 25, 40, pp. 6374-6381
M. R. Müller, A. Gumprich, E. Ecik, K. T. Kallis, F. Winkler, B. Kardynal, I. Petrov, U. Kunze, J. Knoch: Visibility of two-dimensional layered materials on various substrates, Journal of applied physics 118.14 (2015): 145305
L. Nielen, A. Siemon, S. Tappertzhofen, R. Waser, S. Menzel, E. Linn: Study of Memristive Associative Capacitive Networks for CAM Applications, 2015, IEEE Journal of Emerging and Selected Topics in Circuits and Systems, 5, 2, 153-161
S. Tappertzhofen, E. Linn, S. Menzel, A.J. Kenyon, R. Waser, I. Valov: Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells, 2015, IEEE Transactions on Nanotechnology, 14, 3, 505-5012
S. Ebschke, J. Zimmermann, A. Wiggershaus, K. T. Kallis, H. L. FiedlerTest environment for characterization of a nanoscale sensor system consisting of fluid flow sensors based on the Thermal-Time-of-Flight (TToF) principle and absolute pressure sensors, Proceedings of the 2014 IEEE Sensors Conference, Valencia, Spain 2014, November 02-05, pp. 1340-1343
S. Tappertzhofen, R. Waser, I. Valov: Impact of Counter Electrode Material on the Redox Processes in Resistive Switching Memories, 2014, ChemElectroChem, 1, 8, 1287-1292
I.Valov, S. Tappertzhofen, E. Linn, S. Menzel, J. van den Hurk, R. Waser: Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories, 2014, ECS Transactions , 64, 14, 3-18 
Y. Yang, P. Gao, L. Li, X. Pan, S. Tappertzhofen, S. H. Choi, R. Waser, I. Valov, W. D. Lu: Electrochemical dynamics of nanoscale metallic inclusions in dielectrics, 2014, Nature Communications, 5, 4232, 1-9
M. R. Müller, A. Gumprich, F. Schütte, K. T. Kallis, U. Künzelmann, S. Engels, C. Stampfer, N. Wilcke, J. Knoch: Buried triple-gate structures for advanced field-effect transistor devices, Microelectronic Engineering, Volume 119 (May 2014), pp. 95-99
S. Brabender, K. Kolander, K. T. Kallis, H. L. Fiedler: Wafer Extension for Cost-Effective Front to Back Side Alignment, Journal of Nano Research, Volume 27 (2014), pp. 1-4
S. Tappertzhofen, E. Linn, U. Böttger, R. Waser, I. Valov: Nanobattery Effect in RRAMs - Implications on Device Stability and Endurance, 2013, IEEE Electron Device Letters, Volume 35, S. 208-210
D.Y. Cho, S. Tappertzhofen, R. Waser, I. Valov: Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories, 2013, Scientific Reports, Volume 3, S.1169
S. Tappertzhofen, I. Valov, T. Tsuruoka, T. Hasegawa, R. Waser, M. Aono: Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories, 2013, ACS Nano, Volume 7, S. 6396-6402
D.Y. Cho, S. Tappertzhofen, R. Waser, I. Valov: Bond Nature of Active Metal Ions in SiO2-based Electrochemical Metallization Memory Cells, 2013, Nanoscale, Volume 5, S. 1781-1784
O. Kavehei, E. Linn, L. Nielen, S. Tappertzhofen, E. Skafidas, I. Valov, R. Waser: An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing, 2013, Nanoscale, Volume 5, S. 5119-5128
S. Tappertzhofen, R. Waser, I. Valov:  New insights into redox based resistive switches, 2013, Non-Volatile Memory Technology Symposium Proceedings, 1-5
S. Menzel, S. Tappertzhofen, R. Waser, I. Valov: Switching Kinetics of Electrochemical Metallization Memory Cells, 2013, Physical Chemistry Chemical Physics, Volume 15, pp. 6945-6952
I. Valov, S. Tappertzhofen, E. Linn, R. Waser: The Role of Electrochemical Interfaces in ReRAM Memory Cells, 2013, ECS Transactions, Volume 58, S. 189-196
I. Valov, E. Linn, S. Tappertzhofen, S. Schmelzer, J. Van Den Hurk, F. Lentz, R. Waser: Nanobatteries in redox-based resistive switches require extension of memristor theory, 2013, Nature Communications, Volume 4, S. 1771
S. Tappertzhofen, H. Mündelein, I. Valov, R. Waser: Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide, 2012, Nanoscale, Volume 4, S. 3040-3043
D.Y. Cho, I. Valov, J. van den Hurk, S. Tappertzhofen, R. Waser: Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory, 2012, Advanced Materials, Volume 24, S. 4552-4556
S. Tappertzhofen, I. Valov, R. Waser: Quantum conductance and switching kinetics of AgI based microcrossbar cells, 2012, Nanotechnology, Volume 23, 145703
E. Linn, R. Rosezin, S. Tappertzhofen, U. Böttger, R. Waser: Beyond von Neumann-logic operations in passive crossbar arrays alongside memory operations, 2012, Nanotechnology, Volume 23, 305205
S. Tappertzhofen, S. Menzel, I. Valov, R. Waser: Redox Processes in Silicon Dioxide Thin Films using Copper Microelectrodes, 2011, Applied Physics Letters, Volume 99, 203103
S. Tappertzhofen, E. Linn, L. Nielen, R. Rosezin, F. Lentz, R. Bruchhaus, I. Valov, U. Böttger, R. Waser: Capacity based Nondestructive Readout for Complementary Resistive Switches, 2011, Nanotechnology, Volume 22, 395203
S. Tappertzhofen, M.Hempel, I. Valov, R. Waser: Proton Mobility in SiO2 Thin Films and Impact of Hydrogen and Humidity on the Resistive Switching Effect, 2011, Materials Research Society Symposium Proceedings, 1330
M. Röscher, S. Tappertzhofen, T. Schneller: Precursor Homogeneity and Crystallization Effects in Chemical Solution Deposition-Derived Alkaline Niobate Thin Films, 2011, Journal American Ceramic Society, 94, S. 2193-2199

Anfahrt & Lageplan

Der Campus der Technischen Universität Dortmund liegt in der Nähe des Autobahnkreuzes Dortmund West, wo die Sauerlandlinie A45 den Ruhrschnellweg B1/A40 kreuzt. Die Abfahrt Dortmund-Eichlinghofen auf der A45 führt zum Campus Süd, die Abfahrt Dortmund-Dorstfeld auf der A40 zum Campus-Nord. An beiden Ausfahrten ist die Universität ausgeschildert.

Direkt auf dem Campus Nord befindet sich die S-Bahn-Station „Dortmund Universität“. Von dort fährt die S-Bahn-Linie S1 im 20- oder 30-Minuten-Takt zum Hauptbahnhof Dortmund und in der Gegenrichtung zum Hauptbahnhof Düsseldorf über Bochum, Essen und Duisburg. Außerdem ist die Universität mit den Buslinien 445, 447 und 462 zu erreichen. Eine Fahrplanauskunft findet sich auf der Homepage des Verkehrsverbundes Rhein-Ruhr, außerdem bieten die DSW21 einen interaktiven Liniennetzplan an.

Zu den Wahrzeichen der TU Dortmund gehört die H-Bahn. Linie 1 verkehrt im 10-Minuten-Takt zwischen Dortmund Eichlinghofen und dem Technologiezentrum über Campus Süd und Dortmund Universität S, Linie 2 pendelt im 5-Minuten-Takt zwischen Campus Nord und Campus Süd. Diese Strecke legt sie in zwei Minuten zurück.

Vom Flughafen Dortmund aus gelangt man mit dem AirportExpress innerhalb von gut 20 Minuten zum Dortmunder Hauptbahnhof und von dort mit der S-Bahn zur Universität. Ein größeres Angebot an internationalen Flugverbindungen bietet der etwa 60 Kilometer entfernte Flughafen Düsseldorf, der direkt mit der S-Bahn vom Bahnhof der Universität zu erreichen ist.